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Brand Name : zmsh
Model Number : transparent colorless
Certification : ISO9001
Place of Origin : china
MOQ : 10PCS
Price : by case
Payment Terms : T/T, T/T
Delivery Time : 30days within
Packaging Details : by customized case
industry : semiconductor substrate
materials : sic crystal
application : Seed wafers
Type : 4H-N, or High purity un-doped 4h-semi
color : white
hardeness : 9.4 up
grade : optical grade
size : can be customized
thermal conductivity : 4.9w/cm.k
6inch production prime SIC crystal Silicon Carbide seed Wafer 0.6mm Thickness for sic growth
high purity undoped or transparent colorless sic optical lens wafer for Quantum light source
we can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 -6inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .
1.material application and advantagement
Applications:
• GaN epitaxy device 
 • Optoelectronic device 
 • High frequency device 
 • High power device 
 • High temperature device 
 • Light emitting diodes
• Low lattice mismatch
 • High thermal conductivity 
 • Low power consumption 
 • Excellent transient characteristics
 • High band gap

| SILICON CARBIDE MATERIAL PROPERTIES | ||
| Polytype | Single Crystal 4H | Single Crystal 6H | 
| Lattice Parameters | a=3.076 Å | a=3.073 Å | 
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB | 
| Band-gap | 3.26 eV | 3.03 eV | 
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 | 
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K | 
| Refraction Index | no = 2.719 | no = 2.707 | 
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 | 
| Thermal Conductivity | 490 W/mK | 490 W/mK | 
| Break-Down Electrical Field | 2 – 4 · 108 V/m | 2 – 4 · 108 V/m | 
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s | 
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S | 
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S | 
| Mohs Hardness | ~9 | |



FAQ:
Q: What's your MOQ and delivery time?
A: (1) For inventory, the MOQ is 3pcs. if 5-10pcs it's better in 10-30days
(2) For 6inch customized products, the MOQ is 10pcs up in 30-50days
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T, 100%
Q: Do you have standard products?
A:there are not 6inch Our standard products in stock.
but as like substrates 4inch 0.33mm 2sp thickness have some in stock
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| Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2 Images | 
 4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime
                                                                                    
                        
                        
                        
                                                            4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime
                                                    
                        
                     High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon
                                                                                    
                        
                        
                        
                                                            High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon
                                                    
                        
                     2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
                                                                                    
                        
                        
                        
                                                            2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
                                                    
                        
                     2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For
                                                                                    
                        
                        
                        
                                                            2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For
                                                    
                        
                     dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped
                                                                                    
                        
                        
                        
                                                            dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped
                                                    
                        
                     Customized Size Square Sic Chip Low Lattice Mismatch With High Thermal
                                                                                        
                                                        
                        
                        
                        
                                                            Customized Size Square Sic Chip Low Lattice Mismatch With High Thermal
                                                    
                        
                     3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
                                                                                    
                        
                        
                        
                                                            3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
                                                    
                        
                     Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity
                                                                                    
                        
                        
                        
                                                            Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity
                                                    
                        
                     4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device
                                                                                    
                        
                        
                        
                                                            4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device
                                                    
                        
                     8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applicatio
                                                                                    
                        
                        
                        
                                                            8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applicatio